Abstract
The removal of the radiation damage in neutron transmutation-doped silicon during the isochronal annealing from a temperature of 423–1223 K has been monitored by electron paramagnetic resonance spectroscopy. The dominant defect centers have been identified to be P1, A2, A4, A8, and A11. Complete decay of all the defect centers has been found to take place on annealing at 923 K, where a complete recovery of conduction electron spin resonance signal also takes place.
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