Abstract
In view of the fact that there is no information on the microstructure of specimens of boron carbide containing up to 60% B 10 isotope and irradiated at a temperature of 350-370 C, the authors undertook a detailed study of the radiation-induced defects in such material. The microstructure of unexposed boron carbide is characterized by the presence of pores originating during the technological process, dislocations, and twins. Irradiation of B/sub 4/C leads to the formation of defects measuring 3-20 nm and exhibiting a contrast that is characteristic of dislocation loops or two-dimensional second-phase precipitates and spherical pores measuring 1-4 nm in diameter. A specific microstructural feature of irradiated boron carbide is the formation of 30 nm wide zones that are free from pores and other radiation-induced defects near the gain boundaries. The obtained results indicate that irradiation of boron carbide in the 350-370 C range leads to the formation of several types of defects that can be detected by their image contrast under different conditions of photographing.
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