Abstract
Radiation damage in lithium orthosilicate (Li 4 SiO 4 ) and Al-doped Li 4 SiO 4 (Li 3.7 Al 0.1 SiO 4 ) irradiated with oxygen ions was studied with ionic conductivity measurements, Raman spectroscopy, Fourier transform infrared photo-acoustic spectroscopy (FT-IR PAS) and transmission electron microscopy. It was seen from the ionic conductivity measurements that lithium-ion vacancies were introduced as irradiation defects for Li-ions sites in both materials due to the irradiation. By the Raman spectroscopy, oxygen atoms in SiO 4 tetrahedra were considered to be preferentially displaced due to the irradiation for Li 4 SiO 4 , although only a decrease of the number of SiO 4 tetrahedra occurred for Li 3.7 Al 0.1 SiO 4 by displacement of both silicon and oxygen atoms
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