Abstract
Samples of (100), (111) and (110) oriented Ge-crystals were implanted with 40 keV Te + ions at fluences between 5 × 10 13 and 5 × 10 14 cm −2. The beam alignment during the implantation was α = 0 ° or within 6 to 7° from the surface normal. The disorder depth profiles were analysed by using conventional and high depth resolution RBS channeling of 2 MeV helium ions. The damage profiles for implantation at α smaller than the critical angle for axial channeling (ψ c) show an increase in the average penetration depth and a reduction in the damage peak in comparison to the case of α exceeding ψ c. In parallel, a MARLOWE based computer code is applied to simulate the atomic collision cascades and resulting impurity and disorder depth distributions.
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More From: Nuclear Inst. and Methods in Physics Research, B
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