Abstract
Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 × 10 13–5 × 10 17 N/cm 2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by a model [N. Hecking et al., Nucl. Instr. and Meth. B15 (1986) 760]. A comparison of model parameters for N and heavier ions yields insight in the different weights of defect production and interaction processes involved. A favoring influence of N on the defect stabilization and the amorphization is discussed.
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