Abstract
We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm−2(300 K) with an increase of the number of QD stacks (N) up to 10. ForN≥ 3 lasing occurs via the QD ground state up to room temperature. Differential efficiency increases withNup to 50%. No change in range of high temperature stability of threshold current density (Jth) was observed, while the characteristic temperature (T0) measured at 300 K increases from 60 to 120 K. Using InGaAs-AlGaAs QD with higher localization energy allowed us to decreaseJthdown to 60 A cm−2and to increase the differential efficiency up to 70%.
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