Abstract
Xe-lamp light was used to anneal radiation damage and activate the dopant in silicon multi-implanted SI-GaAs. The recovery of damage appeared to take place from the interior via a solid-phase epitaxial process, with a 0.3 eV activation energy. Electrical activity and carrier mobility of samples annealed by 1.7-14 W/cm2 Xe light are higher than those obtained by thermal annealing in the temperature region of 700–850°C. The activity of 93% may be the highest value that has been reported up to now in the laser or electron-beam annealing literature.
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