Radiated disturbance characteristics of SiC MOSFET module

Abstract

Wide band gap semiconductor device silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages and are considered to be the most promising alternative to silicon (Si) insulated gate bipolar transistors (IGBTs) in low-/medium-voltage fields. However, a faster switching speed results in more serious electromagnetic disturbance problems in the application of SiC MOSFET. In this paper, an experiment system is established to measure the radiated disturbance of a single SiC MOSFET module operating at 9 kHz–300 MHz. The radiated electric fields of the SiC MOSFET module are mainly concentrated within 160 MHz. The switching voltage and radiated disturbance of the Si IGBT module are measured and compared with those of the SiC MOSFET module. The voltage of the SiC MOSFET has a faster change rate and a higher overshoot, which results in the radiated electric fields of SiC MOSFET module being 5–10 dB higher than those of the Si IGBT module below 8 MHz. The measurement results in the time-domain and frequency-domain correspond. A detailed model of a SiC MOSFET module is established and the radiated electric fields are calculated using the method of moments (MOM). The calculated results show the effectiveness of the model for radiated disturbance prediction. In this paper, the radiated electric fields of a SiC MOSFET module are measured and analyzed, and the calculation model can be used to further evaluate the radiated disturbance characteristics of SiC MOSFET and influencing factors.