Abstract
We study the properties and parameters of compact photoresistor sensors with radial contacts made from CdxHg1−xTe (x≈0.212) heteroepitaxial structures with graded-base contacts. For a bias voltage corresponding to a voltage sensitivity of 1.5×105 V/W and a planar field of view of 14°, the maximum power output was 0.5 μW per element, while the minimum specific detection capability is 1.2×1011 cm⋅Hz1/2/W. The photoresistor design and resulting photoelectric parameters of the photoresistors enable us to produce focal-plane photoresistor arrays with pixel counts of the order of 106 and use multiplexers for image signal processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
