Abstract
Within a general approach suitable to describe a coherently driven two-level system interacting with a dephasing reservoir, we have proposed various mechanisms to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized two-level semiconductor systems. We have shown that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Furthermore, we have also shown that stationary as well as non-stationary effects resulting from the coupling to the environment may give rise to intensity-dependent damping of oscillations.
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