R.F. plasma annealing of as-grown defects in the Si/SiO2 system

Abstract

Abstract The annealing effect of an r.f. hydrogen plasma on the interface properties in Si/SiO2 systems was investigated. The fixed oxide charge is found to be sensitive to the low temperature plasma annealing. Annealing is more effective at higher temperatures and when applied to metallized structures. With bare oxides the generation of slow states is observed whose concentration depends on the substrate temperature. A final 450 °C hydrogen anneal gives very low fixed charge densities. Comments on the annealing mechanism are also given.