Abstract

Abstract : We summarize our sixth quarter progress towards developing a thin- film-edge, emitter vacuum transistor capable of 1 GHz modulation for sustained (>l hour) periods of time. We completed extensive DC characterization of completed devices. We also performed low frequency modulation tests of the vacuum transistors at 10-100 KHz. We designed a vacuum feedthrough with high frequency probes for testing vacuum transistors at 2-4 GHz (BNC connectors) and 10- 12 GHz (SMA connectors). A program review was held at the conclusion of the baseline phase. We also replanned the option phase of the program with a goal of obtaining vacuum transistors that have 1 GHz modulation with gain.... Vacuum microelectronics, Edge emitter, Triode, High frequency devices.

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