R면 사파이어 위에 HVPE로 성장된 a면 GaN 에피층의 성장온도 효과 및 1000℃에서의 V/III족 비의 효과

Abstract

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at 1000 C and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi- layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at 1000 C, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at 1000 C and V/III ratio = 10 showed the lowest value FWHM for RC of a- plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.