Abstract

A novel structure is proposed for a solid-state electrochromic (EC) device to improve its dynamic response. The proposed device is composed of an indium–tin-oxide (ITO)-coated glass substrate, an amorphous thin WO3 film, a very thin SiO2 film, an electrolytic thin Ta2O5 film, and a semitransparent top electrode. The experimental results show that the EC response significantly improves compared with the conventional device with no SiO2 films, and that the response time decreases to 100 ms at a bias voltage of 3 V. This value is close to a practical level for actual applications. This improvement is interpreted to be a result of carrier accumulation produced by the SiO2 film followed by an increase in the proton generation rate leading to fast EC coloration. The observed quick response is also discussed in relation to the EC efficiency. The charge accumulation approach is very useful for development of a fast and reliable solid-state EC device.

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