Abstract
In this study Cu2++Eu3+ co-doped ZnO(ZnO/Cu2++Eu3+) solid solution powders were synthesized by solution combustion method using as oxidant agent zinc nitrate hexahydrate and as fuel urea; the Cu2+ concentrations were 0, 1, 2, 3, 10, and 20 %Wt; the Eu3+ ion concentration was fixed in 3%Wt. The samples after were annealed at 900°C by 20 h in air. The structural results showed the largely presence of a wurtzite solid solution of Cu2++Eu3+doped ZnO, at high Cu2+ doping CuO and Eu2CuO4 phases are also present. Morphological properties were analyzed using scanning electron microscopy (SEM) technique. However it is important to remark that the Cu2+ ions suppress the Eu3+ ion photoluminescence (PL) by means of an overlap mechanism between Cu2+ absorption band and Eu3+emission band (e.g. 5D0→7F2) of the Eu3+ emission spectra.
Highlights
Zinc oxide (ZnO) is considered to be a II-VI semiconductor material of great importance in basic science as in technologic applications due to its important properties physical and chemicals: the ZnO has a band gap energy of 3.7 eV [1]-[6], an large exciton bonding energy of 60 meV, has defects as O and Zn vacancies; it is chemically and thermally stable and friendly with the environment
It is well known that the co-doping with Cu2+ ion in Eu3+ doped glasses photoluminescent compounds the Cu2+ ion can quench the Eu3+ photoluminescence [27]-[29] with the increase of the Cu2+ ion concentration in glasses matrix; this quenching effect can be used to tuning between ultra-violet and visible emission in devise photoluminescent
Using the Scherrer formula, the average crystallite size calculated from characteristic peak (101) was 160 nm for the ZnO intrinsic and decreased to 150 nm for the ZnO/Cu2++Eu3+ samples doped with 10 Wt% of Cu2+ ion concentration
Summary
Zinc oxide (ZnO) is considered to be a II-VI semiconductor material of great importance in basic science as in technologic applications due to its important properties physical and chemicals: the ZnO has a band gap energy of 3.7 eV [1]-[6], an large exciton bonding energy of 60 meV, has defects as O and Zn vacancies; it is chemically and thermally stable and friendly with the environment Due to these properties, the ZnO can be utilized in the fabrication of devices such as: electro-optical devices [7], gas sensors [8], catalyst [9], piezoelectric device [10], electro-optical [11], photovoltaic [12], paramagnetic [13], etc. Growth [20], metal organic catalyst assisted vapor-phase epitaxy [21], aqueous thermal decomposition [22], microwave activated chemical bath deposition (MW-CBD) [23], chemical bath deposition (CBD) [24], surfactantassisted hydrothermal method [25], solution combustion [26] etc. It is demonstrated that the quenching Eu3+ PL by the copper ion action occurs in ZnO matrix
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