Abstract
In this contribution, we report on the increase of the output voltage for wide bandgap (Eg > 1.4 eV) Cu(In,Ga)Se2 films by doping potassium via post‐deposition treatment of the grown absorber layer. Also the carrier collection is improved by Potassium fluoride treatment (KF). The difference between KF‐treated and untreated samples is investigated using J–V parameters, external quantum efficiency (EQE), and VOC(t) transients under red illumination. Statistics shows an increased activation energy of saturation current and a trend toward a positive dVOC/dt. Thus the increased VOC can be explained through partially quenched recombination at the interface of buffer/absorber layer.
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