Quench-induced defects in silicon doped with group III acceptor impurities: Generation and annealing

Abstract

The formation and annealing of quench-induced defects in Czochralski silicon have been studied using IR spectroscopy and Hall effect measurements. The results demonstrate that the behavior of quench-induced defects in Si〈Al〉 differs markedly from that in silicon doped with other Group III acceptor impurities: B, Ga, and In. The elastic fields created in Si by the Ga and In dopants, as well as by the isovalent impurity Sn, increase the density and annealing temperature of quench-induced defects. The highest density of quench-induced defects in Si〈Al〉 was observed at 1100°C.