Abstract
AbstractIn order to realize high‐efficiency ultraviolet (UV) light‐emitting diodes (LEDs) or low threshold current UV laser diodes (LDs), group‐III nitride quantum dots (QDs) are very attractive. We fabricated quaternary InAlGaN quantum dots (QDs) using an anti‐surfactant method. The InAlGaN‐QDs were grown by low‐pressure metal‐organic chemical‐vapor deposition (MOCVD) on an InAlGaN buffer surface treated by a silicon anti‐surfactant. The lateral size and height of the self‐assemble InAlGaN QDs were 8‐18 nm and 5‐8 nm respectively as observed by the atomic force microscope (AFM). We observed intense photoluminescence (PL) from the InAlGaN QDs at room temperature (RT). We also fabricated an InAlGaN‐QD UV‐LED on a high‐quality AlN/AlGaN buffer template grown on a sapphire substrate. We obtained current injection emission of the InAlGaN‐QD UV‐LED with the wavelength of 335nm under RT CW operation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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