Abstract
High-resolution electron-energy-loss spectroscopy (HREELS) is used to study δ-doped GaAs samples with varying silicon dopant concentration. The δ-doped layers were grown by molecular-beam epitaxy at a substrate temperature of 600 o C and the silicon atoms were incorporated 20 nm underneath the surface. Characteristic loss structures are observed in the HREEL spectra and are attributed to the excitation of quasi-two-dimensional (2D) plasmon modes confined to the 6-doped region. A three-layer model of a confined free-electron gas is presented to understand the nature of the quasi-2D plasmon loss features
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