Abstract
A concept of the quasisuperlattice storage has been demonstrated in this study. Under suitably operated voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel storage in the quasisuperlattice. Also, the a-Si quantum wells provide a feasible design for the 2 bit per cell nonvolatile memory devices. The operation of the 2 bit per cell needs to be performed by Fowler–Nordheim tunneling instead of conventional channel hot electron injection. Additionally, the dual read operation of the source and drain sides for conventional SONOS 2bit∕cell device is not necessary, which simplifies the circuit design engineering.
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