Abstract

The rotational switching behavior of electrodeposited thin films is shown to be similar to that reported for vacuum deposited thin films. The influence of the Hc/Hk ratio (0.30–1.1), dispersion (5°–13°) of the easy axis, thickness , and the angle of the applied field to the easy axis were determined on (i) the magnetization path during flux reversal, and (ii) the wall motion and rotational thresholds. The rotational thresholds were compared to the Stoner‐Wohlfarth curve for simple coherent rotation. The separation of the rotational and wall motion thresholds appears to be thickness dependent.

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