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https://doi.org/10.1016/0040-6090(93)90507-l
Copy DOIJournal: Thin Solid Films | Publication Date: Aug 1, 1993 |
Citations: 9 |
Quasi-static and high frequency capacitance-voltage ( C-V) measurements of Al/Ta 2O 5/SiO 2/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta 2O 5-SiO 2 interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented.
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