Abstract

Quasi-static and high frequency capacitance-voltage ( C-V) measurements of Al/Ta 2O 5/SiO 2/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta 2O 5-SiO 2 interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.