Abstract
We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor $({\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As})$ is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an ``exchange spring'') within the biased ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$ layer. The distinctive tunneling anisotropic magnetoresistance of ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$ produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.
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