Abstract
This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a low voltage current mirror and highlights its advantages over the floating gate MOSFET (FGMOS). The use of resistive compensation has been shown to enhance the bandwidth of QFGMOS current mirror. The proposed current mirror based on QFGMOS has a current range up to 500μA with offset of 2.2nA, input resistance of 235Ω, output resistance of 117kΩ, current transfer ratio of 0.98, dissipates 0.83mW power and exhibits bandwidth of 656MHz which increases to 1.52GHz with resistive compensation. The theoretical and simulation results are in good agreement. The workability of the circuits has been verified using PSpice simulation for 0.13μm technology with a supply voltage of ±0.5V.
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