Abstract
The operation of a tunneling hot-electron-transfer amplifier has been simulated by treating it as a double-barrier diode where the field across each barrier can be varied independently. Current flow is evaluated by calculating the transmission coefficient of the entire structure starting from a coherent-transport framework and then by phenomenologically introducing both elastic and inelastic scattering of the electrons in the base region between the two barriers. By directly comparing the numerical results with those obtained experimentally, we have been able to establish an upper bound of the mean free path of electrons in the base of around 45 nm.
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