Abstract
A quasi-2-D analytical model of the surface electrical field distribution and optimization of the RESURF LDMOS is presented in this paper. Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias. A criterion for obtaining the optimization trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the optimal relations of all design parameters. All analytical results are well verified by the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data, showing the validity of the model presented here.
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