Abstract
The architecture and main parameters of photosensor structures and devices based on colloidal quantum dots (CQDs) of II, IV and VI group elements of the Periodic Table of D. Mendeleev are considered. Hybrid structural schemes of photoresistor, photodiode and phototransistor with absorbing layers based on HgTe, HgSe, PbS, PbSe CQDs and 2D materials for operation in various spectral ranges are com-prehensively discussed.
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