Abstract
Numerical simulations of spatially non-uniform picosecond-range switching of high-voltage silicon diodes with technological imperfections have been performed. It is shown that spatially inhomogeneous distribution of process-induced deep-level centers that trigger ionization process easily provoke current localization. A fluctuation of concentration with a relative amplitude of 10% leads to almost complete localization of current. The switching time sharply decreases (from ∼100 ps to ∼10 ps) with the increase of the amplitude of the inhomogeneity and the decrease of its size.
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