Abstract
A method for calculating the quasi-static current-voltage characteristics for ion currents in a metal-insulator-semiconductor structure is suggested. Theoretical and experimental peaks of ion currents in the current-voltage characteristic were compared. The influence of a semiconductor on the characteristic current-voltage shape was considered. The distribution of ions in the insulator film was calculated. Formulas for determining both the background concentration of ions in thefilm and their concentration at the insulator-semiconductor interface are suggested.
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