Abstract
In this study a compact method will be given to determine the quasi-static TEM parameters of the open and shielded three-layer microstrip lines. These parameters are the line capacitance, characteristic impedance, guide wavelength, effective dielectric constant, and potential distribution on the line. The developed formulation can be used to analyze the reduced-layer type of microstrip lines, shielded double-layer microstrip lines, double-layer microstrip lines, shielded microstrip lines, and open microstrip lines. It has been found that the results calculated by using the analytical expressions obtained in the present article are in very good agreement with the calculated results by using the other methods given in the literature.
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