Abstract
A quantitative form of the linear correlation between the high-frequency and static dielectric constants in ANB8-N (N = 2, 3) tetrahedrally coordinated semiconductor materials, and also in I-VII group alkali halides was studied. So, a quasi-linear relationship was found between the high-frequency and the static dielectric constants for some selected II-VI (ZnS, ZnSe, ZnTe and CdTe) and III-V (AlP, AlAs, AlSb,….etc) cubic zincblende type materials, in the other side a weak uphill linear relationship has been found in the case of I-VII (LiF, NaF, LiCl,….etc) group alkali halides compounds. In the case of II-VI and III-V cubic zincblende semiconductors, the linear regression is established with a correlation coefficient ( ) of about 0.98. The significance of the linear regression is given as the probability P <0.0001 of the null hypothesis.
Highlights
ANB8-N binary semiconductor compounds have been extensively studied in recent years, because of their technological importance and their crystallographic structure [1]
A quasi-linear relationship was found between the high-frequency and the static dielectric constants for some selected II-VI (ZnS, ZnSe, ZnTe and CdTe) and III-V (AlP, AlAs, AlSb,....etc) cubic zincblende type materials, in the other side a weak uphill linear relationship has been found in the case of I-VII (LiF, NaF, LiCl,....etc) group alkali halides compounds
The significance of the linear regression is given as the probability P
Summary
ANB8-N binary semiconductor compounds have been extensively studied in recent years, because of their technological importance and their crystallographic structure [1]. Due to technological importance of I-VII alkali halides solids, IIVI and III-V semiconductor compounds, several works on their electronic, optical, mechanical and thermal properties were recently published in the literature [2-10]. In our recent work [8], we report first principles calculations of the near-neighbor distance and the average energy gap using the pseudopotential plane wave method, in the framework of the density functional theory (DFT), the optoelectronic properties such as homopolar and heteropolar energies, dielectric constant and optical susceptibility and some other thermal properties of boron-bismuth (BBi) compound in its zincblende phase have been determined by using several formulas of the literature. We attempt to discuss the linear correlation between the high-frequency and static 0 dielectric constants in ANB8-N (N = 2, 3) tetrahedrally coordinated semiconductor materials, and in I-VII group alkali halides compounds
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