Abstract
The influence of SiO2 doping on the microstructure and electrical behavior of SnO2 varistors has been studied. The varistor effect was studied over a wide range from 10−9 A to 104 A. It is shown that the J(E) characteristic of SnO2 ceramics exhibits a nonlinear coefficient >100. The SiO2 doping also resulted in a sharp-abrupt upturn region in the I–V characteristic, indicating a single semiconductor junction behavior. The leakage current of the varistors is rather low, on the order of 10−10 S m−1. In the upturn region of operation where the curve departs from the nonlinear relation and approaches the value of the bulk resistivity of the material, the ceramic is characterized by a current density almost independent of the applied voltage. A very small amount of SiO2 causes large perturbations of the conventional thermionic emission observed in varistor ceramic materials.
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