Abstract
Epitaxial growth of single-layer transition metal dichalcogenides can give rise to high-quality, large area materials, and it is even possible to grow them in just a single orientation---the key to exploit properties such as the valley degree of freedom. However, the strong interaction with the substrate that favors a single orientation can also destroy the interesting properties of the material due to hybridization effects. Here this issue is resolved by first growing a single layer of WS${}_{2}$ on Ag(111) and then decoupling it from the surface via the intercalation of Bi atoms.
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