Abstract
This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV. V-V, I-impurity atom and V-impurity atom interactions are analyzed both experimentally and as modeled using computer simulations. A process of divacancy (V2) accumulation in the dose-dependent linear region is investigated. The effect of impurities on recombination of correlated divacancies, and I-atoms that had become displaced from regular lattice points is estimated by computer modeling of an appropriate diffusion-controlled process. It is concluded that the experimental results can be interpreted quantitatively in terms of a strongly anisotropic quasi-one-dimensional diffusion of displaced I-atoms. In addition, a significant difference is found between the effects of pico-second duration electron beam irradiation, which causes the formation of A-centre (V + Oxygen) clusters, while when the beam is applied on a micro-second timescale, divacancies are created instead, although the electrons have the same energy in both cases.
Highlights
This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV
A process involving the accumulation of radiation defects in the dose-dependent, linear region is studied in detail
It was shown that there is a substantial difference in the introduction rate of radiation defects in Si samples with different contents of impurities, and when ultrafast electron irradiation is used
Summary
Such phenomena have been the subject of numerous previous studies (for example [1]-[6]), there is a lack of detail available regarding the kinetics and accumulation rates for the interactions of impurity atoms with interstitial Si-self atoms (I) and their vacancies (V), i.e. Frenkel pairs, which are induced by the radiation in the Si crystal, in particular, by means of ultrafast radiation-pulses Information of this kind is of interest from both the fundamental and applied-scientific points of view because it enables conclusions to be drawn regarding the formation of secondary radiation defects. Radiation Physics of Semiconductors and Related Materials, Tbilisi, 341-344
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have