Abstract
An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
