Abstract
2D material research, which has been actively researched recently, has had an impact on 1D material research and development through the concept of related material expansion. Although 1D nanowire materials are expected to fuel advances in electronic applications, there is still much to be explored in terms of material diversity. We would like to introduce a variety of quasi-1D materials based on vdW (van der Waals) bonding having a chemical composition of M2N3Se8 (M2N3S8), which is being studied recently. We would like to explain the polymorphism structure and device application characteristics that can occur during the synthesis materials, and the possibility of band-gap engineering through alloying of M and N transition metals and Se-S substitution. Through this, we intend to propose various possibilities of application of the quasi 1D M2N3Se8 (M2N3S8)material system proposed in this paper.
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