Abstract
We demonstrate quantum-dot (QD)-based, optically pumped semiconductor disk lasers (SDLs) for wavelengths ranging from 950 to 1210 nm. QDs grown either in the submonolayer (SML) or in the Stranski–Krastanow (SK) regime are employed as active layers of the SDLs which are based on two different design concepts. Output power of up to 1.4 W continuous wave (CW) is achieved with an InAs/GaAs-SML SDL at 1040 nm. Up to 21 InGaAs SK-QD layers within a single SDL gain structure are used to realize the ground-state CW lasing with 0.3 W at 1210 nm. The SK-QD-based SDL shows temperature and pump-power stable emission. Threshold and differential efficiency do not depend on heat-sink temperature.
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