Abstract
Quantum yields for the loss of disilane and the formation of silane in the 193 nm photodissociation of disilane have been measured using time-resolved infrared diode laser absorption spectroscopy under single excimer laser pulse conditions at total pressures of 5 to 10 Torr in helium buffer gas. The total quantum yield for loss of disilane is 0.7±0.1 while the quantum yield for formation of silane is only 0.10±0.03. The results suggest that numerous photodissociation pathways as well as non-photodissociative relaxation pathways exist for disilane excited near its electronic absorption threshold.
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