Abstract
The quantum yield in silicon has previously been assumed to be of significance only in the ultraviolet spectral range. Due to the low internal losses of induced-junction silicon photodiodes and their predictability it is possible for the first time to make more accurate estimation of the quantum yield. We report on measurement of quantum yield in induced-junction silicon photodiodes. The results show that the quantum yield can be larger than unity even at wavelengths around 450 nm. A model of the quantum yield has been fitted to the experimental data and can be implemented in the spectral responsivity models to maintain high accuracy predictability to around 160 ppm down to 360 nm.
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