Abstract
The authors report on the study of quantum wires and dots near the surface of InSb that contain quasi-one-dimensional and zero-dimensional, i.e. discrete, electron systems. Both types of samples are derived from metal-oxide-semiconductor devices and make it possible to tune the electron number by a gate voltage. The laterally confining potential leads to the formation of one-dimensional sub-bands and to discrete levels respectively. Both are examined by far-infrared resonance spectroscopy. In order to attain a sufficiently high absorptance they fabricated the wires and dots by holographic lithography in arrays on macroscopic areas. Resonance energies of about 10 meV due to the lateral quantisation are found to be comparatively large because of the low conduction band mass of InSb. In particular, the influence of the narrow-gap band structure of InSb and of the electron-electron interaction on the quantised levels is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
