Abstract
Optical properties of Si-Ge superlattices grown on virtual substrates are investigated with a view to engineering optimum characteristics. The oscillator strength and transition energy, both across the fundamental gap and between the conduction sub-bands, are examined as a function of the choice of substrate and well/barrier width. In the former case, the transition energy is shown to be tunable in the range 0.6–1.0 eV which covers the technologically important optical fibre ‘window’ at 1.55 μm. Intersub-band transitions occur at wavelengths in the far infrared. A strong nonlinear optical response can also be achieved via a novel virtual excitation mechanism. Growth parameters are presented for systems in which this response is maximised while keeping the absorption to a minimum.
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