Abstract
We present a cryogenic temperature study of confined transitions and deep impurity levels in a GaAs-Ga 1−xAl xAs multiple quantum well under hydrostatic pressure. Photoreflectance at 80 to 300K was used to study quantized states upto n=7. A sublinear pressure behavior was found, with pressure coefficients that decreased with increasing n. Indirect transitions from L and X conduction bands were also observed. Photoluminescence at 18K was used to observe a deep level, and its phonon replicas, that is resonant below 24 and above 80kbar. The level is observed both in bulk GaAs and the quantum well, and maybe due to Si impurities.
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