Abstract
We demonstrate a novel three-terminal device, the tunnel triode, in which the current within the quantum well is a part of the tunnel current through the p+-n+ junction. A tunnel-diode-like negative differential resistance effect with peak-to-valley ratio as high as 20 was observed, the tunnel current being controlled by the gate voltage. We show that tunneling occurs not in the quantum well, but in the heavily doped n+-Al0.3Ga0.7As layer, and it is preceded by a real-space hot-electron transfer from the quantum well into this layer. Logic operation of a bistable switch was obtained in a circuit comprising a tunnel triode and a series resistance.
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