Abstract
Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type and N-type Si/Si{sub 80}Ge{sub 20} films with encouraging results. These films are fabricated on Si substrates and are being developed for low as well as high temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved over 4000 hours at T{sub H} of 300 C and T{sub C} of 50 C with little or no degradation. Emphasis is now shifting towards couple and module design and fabrication, especially low resistance joining between N and P legs. These modules can be used in future energy conversion systems as well as for air conditioning.
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