Abstract
High-temperature-processing-induced double-stacking-fault $3C\ensuremath{-}\mathrm{SiC}$ inclusions in $4H$ SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately $0.53\ifmmode\pm\else\textpm\fi{}0.06\mathrm{eV}$ below the conduction band minimum of bulk $4H$ SiC. Macroscopic diode $I\ensuremath{-}V$ measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.
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