Quantum well resonant tunneling FET based on topological insulator

Abstract

In this work, we propose a scheme of the resonant tunneling field effect transistor based on a double ferromagnetic barrier on the surface of a topological insulator. In the proposed structure a quantum well will be created in separation between the barriers and therefore the confined states appear in the quantum well region. By tuning of the confined states with a gate voltage exerted on the well region, the carriers will be transferred through this structure with the resonant tunneling process. Our theoretical analysis illustrates that the transfer characteristics of the proposed resonant tunneling device display an oscillatory quantum switching on-off behavior with Ion/Ioff which exceeds from 104. It is also shown that the device output characteristic displays a step-like behavior. We also investigate the influence of the well and barrier thicknesses on the transport properties of the device.