Abstract
We investigated the influence of strain and barriercomposition on the quantum well intermixing (QWI) in In1-xGaxAs/In1-xGaxAs1-yPy multiple-quantum-well (MQW) structures by usingthe impurity-free vacancy diffusion technique. A compressivelystrained MQW structure showed a higher degree of intermixingthan a lattice-matched one due to lower thermal stabilityand larger bandgap difference between the quantum well (QW) andthe barrier. Also, the photoluminescence blueshift increases withincreasing difference of bandgap energy between the QW andthe barrier. In addition, a highly selective QWI with a large bandgapshift difference of 123 meV (195 nm) using an identical silica caphas been achieved from samples capped with InGaAs/SiO2 andInP/SiO2 capping layers. This behaviour may beattributed to the difference in thermal expansion coefficientbetween InGaAs and InP at the annealing temperature.
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