Abstract
An investigation of the low-temperature liquid-phase epitaxy (LTLPE) process at 400–650 °C for crystallization of AlGaAs heterostructures with ultrathin (2–100 nm) layers has been carried out. In particular, low-threshold quantum-well heterolasers (threshold current density jth as low as 120 A cm−2) and high-efficiency solar cells (efficiency as high as 24.0–24.7% under AMO conditions at concentration ratio 20–100 ×) have been fabricated by LT LPE.
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