Abstract
A theoretical model for high-field electroabsorption in a single GaAs quantum well (QW) is presented. Electron and hole properties are modeled with a transfer-matrix technique which includes the nonparabolicity of the energy bands. This model adequately reproduces the coupling between quasibound and continuum states resulting from the influence of a large transverse electric (TE) field on a QW with a finite barrier height. The absorption coefficient has been calculated by the program OPCONS for the TE mode in the QW structure for electric fields ranging from 100 to 500 kV/cm
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