Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance

Abstract

Performance of phosphorene nanoribbon (PNR) MOSFETs at "3 nm" logic technology node is studied using atomistic quantum transport simulations, with an emphasis on the impact of metal contacts, series resistance and transport ballisticity. We find that realistic metal contacts decrease drain current by up to 70%, which corresponds to more than 1400 Ωμm in contact resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</sub> ). On the other hand, setting R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</sub> to 270 Ωμm, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.